IRLI540A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLI540A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 121 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: TO262

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IRLI540A Datasheet (PDF)

..1. Size:344K 1
irli540a irlw540a.pdf

7.1. Size:157K international rectifier
irli540g.pdf

Document Number: 90399 www.vishay.com1391Document Number: 90399 www.vishay.com1392Document Number: 90399 www.vishay.com1393Document Number: 90399 www.vishay.com1394Document Number: 90399 www.vishay.com1395Document Number: 90399 www.vishay.com1396Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

7.2. Size:258K international rectifier
irli540npbf.pdf

PD -95454IRLI540NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.044l Fully Avalanche Rated Gl Lead-FreeID = 23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

7.3. Size:122K international rectifier
irli540n.pdf

PD - 9.1497AIRLI540NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 23ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

7.4. Size:1502K vishay
irli540g irli540gpbf sihli540g.pdf

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur

Otros transistores... IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , IRLI520N , IRLI530A , IRLI530N , IRF540 , IRLI540N , IRLI610A , IRLI620A , IRLI620G , IRLI630A , IRLI630G , IRLI640A , IRLI640G .

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