All MOSFET. IRLI540A Datasheet

 

IRLI540A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLI540A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38.4 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO262

 IRLI540A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLI540A Datasheet (PDF)

 ..1. Size:344K  1
 irli540a irlw540a.pdf

IRLI540A IRLI540A

 7.1. Size:157K  international rectifier
 irli540g.pdf

IRLI540A IRLI540A

Document Number: 90399 www.vishay.com1391Document Number: 90399 www.vishay.com1392Document Number: 90399 www.vishay.com1393Document Number: 90399 www.vishay.com1394Document Number: 90399 www.vishay.com1395Document Number: 90399 www.vishay.com1396Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

 7.2. Size:258K  international rectifier
 irli540npbf.pdf

IRLI540A IRLI540A

PD -95454IRLI540NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.044l Fully Avalanche Rated Gl Lead-FreeID = 23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

 7.3. Size:122K  international rectifier
 irli540n.pdf

IRLI540A IRLI540A

PD - 9.1497AIRLI540NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 23ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

 7.4. Size:1502K  vishay
 irli540g irli540gpbf sihli540g.pdf

IRLI540A IRLI540A

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur

Datasheet: IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , IRLI520N , IRLI530A , IRLI530N , IRF540 , IRLI540N , IRLI610A , IRLI620A , IRLI620G , IRLI630A , IRLI630G , IRLI640A , IRLI640G .

 

 
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