IRLI540N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI540N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 81 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: TO220F

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IRLI540N datasheet

 ..1. Size:258K  international rectifier
irli540npbf.pdf pdf_icon

IRLI540N

PD -95454 IRLI540NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044 l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 ..2. Size:122K  international rectifier
irli540n.pdf pdf_icon

IRLI540N

PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac

 7.1. Size:344K  1
irli540a irlw540a.pdf pdf_icon

IRLI540N

 7.2. Size:157K  international rectifier
irli540g.pdf pdf_icon

IRLI540N

Document Number 90399 www.vishay.com 1391 Document Number 90399 www.vishay.com 1392 Document Number 90399 www.vishay.com 1393 Document Number 90399 www.vishay.com 1394 Document Number 90399 www.vishay.com 1395 Document Number 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

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