IRLI540N - описание и поиск аналогов

PD -95454 IRLI540NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044 l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac

Document Number 90399 www.vishay.com 1391 Document Number 90399 www.vishay.com 1392 Document Number 90399 www.vishay.com 1393 Document Number 90399 www.vishay.com 1394 Document Number 90399 www.vishay.com 1395 Document Number 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast Switching Configur