PD -95454IRLI540NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.044l Fully Avalanche Rated Gl Lead-FreeID = 23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

PD - 9.1497AIRLI540NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 23ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ac

Document Number: 90399 www.vishay.com1391Document Number: 90399 www.vishay.com1392Document Number: 90399 www.vishay.com1393Document Number: 90399 www.vishay.com1394Document Number: 90399 www.vishay.com1395Document Number: 90399 www.vishay.com1396Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur