FMC05N50E Todos los transistores

 

FMC05N50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FMC05N50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: T-PACK-S
 

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FMC05N50E Datasheet (PDF)

 ..1. Size:416K  fuji
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FMC05N50E

FMC05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 8.1. Size:518K  fuji
 fmc05n60e.pdf pdf_icon

FMC05N50E

FMC05N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Otros transistores... SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , FMA49N20T2 , FMB16N50E , FMB80N10T2 , FMC03N60E , AON6380 , FMC05N60E , FMC06N60ES , FMC07N50E , FMC10N60E , FMC11N60E , FMC12N50E , FMC12N50ES , FMC12N60ES .

History: IRF450B | OSG80R650PF | 2N4446 | IRF6100 | VS4610AD | TPW65R170M | AP65PN2R6P

 

 
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