FMC05N50E MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

FMC05N50E Specs and Replacement

Type Designator: FMC05N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 66 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: T-PACK-S

FMC05N50E substitution

- MOSFET ⓘ Cross-Reference Search

FMC05N50E datasheet

..1. Size:416K fuji
fmc05n50e.pdf pdf_icon

FMC05N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

8.1. Size:518K fuji
fmc05n60e.pdf pdf_icon

FMC05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒

Detailed specifications: SIHW30N60E , SIHW33N60E , SIHW47N60E , SIHW73N60E , FMA49N20T2 , FMB16N50E , FMB80N10T2 , FMC03N60E , IRFZ24N , FMC05N60E , FMC06N60ES , FMC07N50E , FMC10N60E , FMC11N60E , FMC12N50E , FMC12N50ES , FMC12N60ES .