FMC05N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMC05N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.5 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: T-PACK-S

 Búsqueda de reemplazo de FMC05N60E MOSFET

- Selecciónⓘ de transistores por parámetros

 

FMC05N60E datasheet

 ..1. Size:518K  fuji
 fmc05n60e.pdf pdf_icon

FMC05N60E

FMC05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 8.1. Size:416K  fuji
 fmc05n50e.pdf pdf_icon

FMC05N60E

FMC05N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

Otros transistores... SIHW33N60E, SIHW47N60E, SIHW73N60E, FMA49N20T2, FMB16N50E, FMB80N10T2, FMC03N60E, FMC05N50E, 2N60, FMC06N60ES, FMC07N50E, FMC10N60E, FMC11N60E, FMC12N50E, FMC12N50ES, FMC12N60ES, FMC13N60E