FMH20N50ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FMH20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

FMH20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

isc N-Channel MOSFET Transistor FMH20N50EFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

http://www.fujielectric.com/products/semiconductor/FMH20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicPb-free lead terminalTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2RoHS compliant 10 0.2DrainApplicationsFor switching+0.3 +0.31.6 -0.11.6 -0.1+0.32.2 -0

isc N-Channel MOSFET Transistor FMH20N60S1FEATURESStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV