FMH20N50ES MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMH20N50ES
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 235 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
Encapsulados: TO-3P-Q
Búsqueda de reemplazo de FMH20N50ES MOSFET
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FMH20N50ES datasheet
fmh20n50es.pdf
FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5
fmh20n50e.pdf
FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)
fmh20n50e.pdf
isc N-Channel MOSFET Transistor FMH20N50E FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S
fmh20n60s1.pdf
http //www.fujielectric.com/products/semiconductor/ FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Pb-free lead terminal TO-3P(Q) 3.2 0.1 15.5max 1.5 0.2 13 0.2 4.5 0.2 RoHS compliant 10 0.2 Drain Applications For switching +0.3 +0.3 1.6 -0.1 1.6 -0.1 +0.3 2.2 -0
Otros transistores... FMH13N60ES, FMH16N50E, FMH16N50ES, FMH16N60ES, FMH17N60ES, FMH19N60E, FMH19N60ES, FMH20N50E, 20N60, FMH21N50ES, FMH23N50ES, FMH23N60E, FMH23N60ES, FMH28N50E, FMH28N50ES, FMH30N60S1, FMH47N60S1
History: NCE2030
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