FMH20N50ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FMH20N50ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 235 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: TO-3P-Q

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FMH20N50ES Datasheet (PDF)

..1. Size:504K fuji
fmh20n50es.pdf

FMH20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

5.1. Size:439K fuji
fmh20n50e.pdf

FMH20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

5.2. Size:256K inchange semiconductor
fmh20n50e.pdf

isc N-Channel MOSFET Transistor FMH20N50EFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

8.1. Size:701K fuji
fmh20n60s1.pdf

http://www.fujielectric.com/products/semiconductor/FMH20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicPb-free lead terminalTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2RoHS compliant 10 0.2DrainApplicationsFor switching+0.3 +0.31.6 -0.11.6 -0.1+0.32.2 -0

8.2. Size:321K inchange semiconductor
fmh20n60s1.pdf

isc N-Channel MOSFET Transistor FMH20N60S1FEATURESStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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