IRLI640A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLI640A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET IRLI640A
IRLI640A Datasheet (PDF)
irli640g.pdf
PD - 9.1237IRLI640GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.18RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 9.9ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast
irli640gpbf.pdf
PD- 95654IRLI640GPbF Lead-Free7/26/04Document Number: 91314 www.vishay.com1IRLI640GPbFDocument Number: 91314 www.vishay.com2IRLI640GPbFDocument Number: 91314 www.vishay.com3IRLI640GPbFDocument Number: 91314 www.vishay.com4IRLI640GPbFDocument Number: 91314 www.vishay.com5IRLI640GPbFDocument Number: 91314 www.vishay.com6IRLI640GPbFPeak Diode Re
irli640g sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
irli640gpbf sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918