FS100VSJ-03F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FS100VSJ-03F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 170 nS
Cossⓘ - Capacitancia de salida: 2300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO-220S
Búsqueda de reemplazo de FS100VSJ-03F MOSFET
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FS100VSJ-03F datasheet
..1. Size:113K renesas
fs100vsj-03f.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:617K infineon
ifs100v12pt4.pdf 
Technical Information MIPAQ serve IFS100V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 100A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem
9.1. Size:112K renesas
fs100umj-03f.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. Size:206K renesas
fs100kmj-03f.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:449K infineon
fs100r12ke3.pdf 
Technische Information / Technical Information IGBT-Module FS100R12KE3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A C vj max C nom Continuous DC collector current T = 25 C, T = 150 C I 140 A
9.4. Size:505K infineon
fs100r12kt4g.pdf 
Technische Information / Technical Information IGBT-Module FS100R12KT4G IGBT-modules EconoPACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK 3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspan
9.5. Size:981K infineon
fs100r12w2t7.pdf 
FS100R12W2T7 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und NTC EasyPACK module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditionin
9.6. Size:457K infineon
fs100r17ke3.pdf 
Technische Information / Technical Information IGBT-Module FS100R17KE3 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A C vj max C nom Continuous DC collector cu
9.7. Size:696K infineon
ifs100b12n3e4-b31.pdf 
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B31 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typ
9.8. Size:452K infineon
fs100r12kt3.pdf 
Technische Information / Technical Information IGBT-Module FS100R12KT3 IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK 3 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-
9.9. Size:662K infineon
ifs100b12n3e4 b39.pdf 
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B39 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C
9.10. Size:441K infineon
fs100r12ks4.pdf 
Technische Information / Technical Information IGBT-Module FS100R12KS4 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70 C, T = 150 C I 100 A C vj max C nom Continuous DC collector cu
9.11. Size:513K infineon
fs100r06ke3.pdf 
Technische Information / Technical Information IGBT-Module FS100R06KE3 IGBT-modules EconoPACK 3 mit schnellem Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK 3 with fast trench/fieldstop IGBT and Emitter Controlled3 diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrsp
9.12. Size:893K infineon
ifs100b12n3e4 b31.pdf 
/ Technical Information IGBT- IFS100B12N3E4_B31 IGBT-modules MIPAQ base / IGBT4 and HE diode and MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shun
9.13. Size:737K infineon
fs100r12w2t7-b11.pdf 
FS100R12W2T7_B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTC EasyPACK module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaa
Otros transistores... FML12N50ES, FML12N60ES, FML13N60ES, FML16N50ES, FML16N60ES, FML20N50ES, FS100KMJ-03F, FS100UMJ-03F, SPP20N60C3, FS10AS-06, FS10AS-2, FS10AS-3, FS10ASJ-06F, FS10ASJ-2, FS10ASJ-3, FS10SM-10, FS10SM-12