FS100VSJ-03F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FS100VSJ-03F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 2300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO-220S
Аналог (замена) для FS100VSJ-03F
FS100VSJ-03F Datasheet (PDF)
fs100vsj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
ifs100v12pt4.pdf
Technical Information MIPAQ serve IFS100V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 100A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem
fs100umj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
fs100kmj-03f.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
fs100r12ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KE3IGBT-modulesIGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I 140 A
fs100r12kt4g.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KT4GIGBT-modulesEconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspan
fs100r12w2t7.pdf
FS100R12W2T7EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und NTCEasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMPotentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditionin
fs100r17ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R17KE3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector cu
ifs100b12n3e4-b31.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp
fs100r12kt3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KT3IGBT-modulesEconoPACK3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK3 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-
ifs100b12n3e4 b39.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC
fs100r12ks4.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 70C, T = 150C I 100 AC vj max C nomContinuous DC collector cu
fs100r06ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFS100R06KE3IGBT-modulesEconoPACK3 mit schnellem Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK3 with fast trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrsp
ifs100b12n3e4 b31.pdf
/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun
fs100r12w2t7-b11.pdf
FS100R12W2T7_B11EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTCEasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMPotentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaa
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918