IRLIZ14G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLIZ14G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 110 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRLIZ14G MOSFET
- Selecciónⓘ de transistores por parámetros
IRLIZ14G datasheet
..1. Size:1073K international rectifier
irliz14gpbf.pdf 
PD- 95655 IRLIZ14GPbF Lead-Free 7/26/04 Document Number 91315 www.vishay.com 1 IRLIZ14GPbF Document Number 91315 www.vishay.com 2 IRLIZ14GPbF Document Number 91315 www.vishay.com 3 IRLIZ14GPbF Document Number 91315 www.vishay.com 4 IRLIZ14GPbF Document Number 91315 www.vishay.com 5 IRLIZ14GPbF Document Number 91315 www.vishay.com 6 IRLIZ14GPbF Peak Diode Re
..3. Size:1637K vishay
irliz14g sihliz14g.pdf
IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.
..4. Size:1638K vishay
irliz14gpbf sihliz14g.pdf
IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.
9.6. Size:1006K international rectifier
irliz34gpbf.pdf
PD- 95656 IRLIZ34GPbF Lead-Free 7/26/04 Document Number 91317 www.vishay.com 1 IRLIZ34GPbF Document Number 91317 www.vishay.com 2 IRLIZ34GPbF Document Number 91317 www.vishay.com 3 IRLIZ34GPbF Document Number 91317 www.vishay.com 4 IRLIZ34GPbF Document Number 91317 www.vishay.com 5 IRLIZ34GPbF Document Number 91317 www.vishay.com 6 IRLIZ34GPbF Peak Diode Re
9.7. Size:105K international rectifier
irliz44n.pdf
PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel
9.9. Size:105K international rectifier
irliz34n.pdf
PD - 9.1329B IRLIZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 22A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the low
9.10. Size:842K international rectifier
irliz24npbf.pdf
PD - 95048 IRLIZ24NPbF HEXFET Power MOSFET Lead-Free www.irf.com 1 2/25/04 IRLIZ24NPbF 2 www.irf.com IRLIZ24NPbF www.irf.com 3 IRLIZ24NPbF 4 www.irf.com IRLIZ24NPbF www.irf.com 5 IRLIZ24NPbF 6 www.irf.com IRLIZ24NPbF www.irf.com 7 IRLIZ24NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information I
9.11. Size:1182K international rectifier
irliz44gpbf.pdf
PD- 95754 IRLIZ44GPbF Lead-Free www.irf.com 1 8/23/04 IRLIZ44GPbF 2 www.irf.com IRLIZ44GPbF www.irf.com 3 IRLIZ44GPbF 4 www.irf.com IRLIZ44GPbF www.irf.com 5 IRLIZ44GPbF 6 www.irf.com IRLIZ44GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +
9.12. Size:256K international rectifier
irliz44npbf.pdf
PD - 95456 IRLIZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.022 l Fully Avalanche Rated G l Lead-Free ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu
9.13. Size:258K international rectifier
irliz34npbf.pdf
PD - 95455 IRLIZ34NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.035 l Fully Avalanche Rated G l Lead-Free ID = 22A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique
9.16. Size:1637K vishay
irliz34g sihliz34g.pdf
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
9.17. Size:1638K vishay
irliz34gpbf sihliz34g.pdf
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
9.18. Size:499K infineon
irliz44npbf.pdf
IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
9.19. Size:275K inchange semiconductor
irliz24g.pdf
iscN-Channel MOSFET Transistor IRLIZ24G FEATURES Low drain-source on-resistance RDS(ON) =0.1 (MAX) Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.20. Size:200K inchange semiconductor
irliz44n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
9.21. Size:275K inchange semiconductor
irliz44g.pdf
iscN-Channel MOSFET Transistor IRLIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
9.22. Size:275K inchange semiconductor
irliz34g.pdf
iscN-Channel MOSFET Transistor IRLIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Otros transistores... IRLI610A, IRLI620A, IRLI620G, IRLI630A, IRLI630G, IRLI640A, IRLI640G, IRLIZ14A, AO3400, IRLIZ24A, IRLIZ24G, IRLIZ24N, IRLIZ34A, IRLIZ34G, IRLIZ34N, IRLIZ44A, IRLIZ44G
