IRLIZ14G - описание и поиск аналогов

PD- 95655 IRLIZ14GPbF Lead-Free 7/26/04 Document Number 91315 www.vishay.com 1 IRLIZ14GPbF Document Number 91315 www.vishay.com 2 IRLIZ14GPbF Document Number 91315 www.vishay.com 3 IRLIZ14GPbF Document Number 91315 www.vishay.com 4 IRLIZ14GPbF Document Number 91315 www.vishay.com 5 IRLIZ14GPbF Document Number 91315 www.vishay.com 6 IRLIZ14GPbF Peak Diode Re

IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.

IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.

PD- 95656 IRLIZ34GPbF Lead-Free 7/26/04 Document Number 91317 www.vishay.com 1 IRLIZ34GPbF Document Number 91317 www.vishay.com 2 IRLIZ34GPbF Document Number 91317 www.vishay.com 3 IRLIZ34GPbF Document Number 91317 www.vishay.com 4 IRLIZ34GPbF Document Number 91317 www.vishay.com 5 IRLIZ34GPbF Document Number 91317 www.vishay.com 6 IRLIZ34GPbF Peak Diode Re

PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

PD - 9.1329B IRLIZ34N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 22A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the low

PD - 95048 IRLIZ24NPbF HEXFET Power MOSFET Lead-Free www.irf.com 1 2/25/04 IRLIZ24NPbF 2 www.irf.com IRLIZ24NPbF www.irf.com 3 IRLIZ24NPbF 4 www.irf.com IRLIZ24NPbF www.irf.com 5 IRLIZ24NPbF 6 www.irf.com IRLIZ24NPbF www.irf.com 7 IRLIZ24NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information I

PD- 95754 IRLIZ44GPbF Lead-Free www.irf.com 1 8/23/04 IRLIZ44GPbF 2 www.irf.com IRLIZ44GPbF www.irf.com 3 IRLIZ44GPbF 4 www.irf.com IRLIZ44GPbF www.irf.com 5 IRLIZ44GPbF 6 www.irf.com IRLIZ44GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

PD - 95456 IRLIZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.022 l Fully Avalanche Rated G l Lead-Free ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

PD - 95455 IRLIZ34NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.035 l Fully Avalanche Rated G l Lead-Free ID = 22A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

iscN-Channel MOSFET Transistor IRLIZ24G FEATURES Low drain-source on-resistance RDS(ON) =0.1 (MAX) Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

iscN-Channel MOSFET Transistor IRLIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

iscN-Channel MOSFET Transistor IRLIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER