IRLL014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95387IRLL014PbFHEXFET Power MOSFETl Surface MountDl Available in Tape & ReelVDSS = 60Vl Dynamic dv/dt Ratingl Logic-Level Gate Drivel RDS(on) Specified at VGS=4V & 5VRDS(on) = 0.20l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = 2.7ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination

PD - 90866AIRLL014HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 60V Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5VRDS(on) = 0.20 Fast SwitchingG Ease of ParallelingID = 2.7ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, r

IRLL014, SiHLL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Surface MountRDS(on) ()VGS = 5.0 V 0.20 Available in Tape and ReelQg (Max.) (nC) 8.4 Dynamic dV/dt RatingQgs (nC) 3.5 Logic-Level Gate DriveQgd (nC) 6.0 RDS(on) Specified at VGS = 4 V and 5 V Fast SwitchingCo

IRLL014, SiHLL014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 60 Available in tape and reelRDS(on) ()VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate driveQg max. (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 VQgs (nC) 3.5Available Fast switchingQgd (nC) 6.0 Ease of parallelingConfigurat

IRLL014, SiHLL014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 60 Available in tape and reelRDS(on) ()VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate driveQg (Max.) (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 VQgs (nC) 3.5Available Fast switchingQgd (nC) 6.0 Ease of parallelingConfigur

PD- 91499BIRLL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.14 Fast SwitchingG Fully Avalanche RatedID = 2.0ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

PD- 95154IRLL014NPbF l Surface Mountl Advanced Process Technology D DSS l Ultra Low On-Resistancel Dynamic dv/dt Rating DS(on) l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free D SDescription

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

PD- 95154IRLL014NPbF l Surface Mountl Advanced Process Technology D DSS l Ultra Low On-Resistancel Dynamic dv/dt Rating DS(on) l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free D SDescription

IRLL014NTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle