IRLL014 - описание и поиск аналогов

PD - 95387 IRLL014PbF HEXFET Power MOSFET l Surface Mount D l Available in Tape & Reel VDSS = 60V l Dynamic dv/dt Rating l Logic-Level Gate Drive l RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20 l Fast Switching G l Ease of Paralleling l Lead-Free ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination

PD - 90866A IRLL014 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 60V Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20 Fast Switching G Ease of Paralleling ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, r

IRLL014, SiHLL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Surface Mount RDS(on) ( )VGS = 5.0 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 8.4 Dynamic dV/dt Rating Qgs (nC) 3.5 Logic-Level Gate Drive Qgd (nC) 6.0 RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Co

IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 60 Available in tape and reel RDS(on) ( )VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate drive Qg max. (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 V Qgs (nC) 3.5 Available Fast switching Qgd (nC) 6.0 Ease of paralleling Configurat

IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 60 Available in tape and reel RDS(on) ( )VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate drive Qg (Max.) (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 V Qgs (nC) 3.5 Available Fast switching Qgd (nC) 6.0 Ease of paralleling Configur

PD- 91499B IRLL014N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.14 Fast Switching G Fully Avalanche Rated ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

PD- 95154 IRLL014NPbF l Surface Mount l Advanced Process Technology D DSS l Ultra Low On-Resistance l Dynamic dv/dt Rating DS(on) l Fast Switching G l Fully Avalanche Rated l Lead-Free D S Description

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150 C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

IRLL014NTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle