IRLL014N Todos los transistores

 ..1. Size:158K  international rectifier
 irll014n.pdf

PD- 91499B IRLL014N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.14 Fast Switching G Fully Avalanche Rated ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 ..2. Size:261K  international rectifier
 irll014npbf.pdf

PD- 95154 IRLL014NPbF l Surface Mount l Advanced Process Technology D DSS l Ultra Low On-Resistance l Dynamic dv/dt Rating DS(on) l Fast Switching G l Fully Avalanche Rated l Lead-Free D S Description

 0.1. Size:548K  international rectifier
 auirll014n.pdf

AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150 C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant

 0.2. Size:2289K  cn vbsemi
 irll014ntr.pdf

IRLL014NTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle

 7.1. Size:219K  international rectifier
 irll014pbf.pdf

PD - 95387 IRLL014PbF HEXFET Power MOSFET l Surface Mount D l Available in Tape & Reel VDSS = 60V l Dynamic dv/dt Rating l Logic-Level Gate Drive l RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20 l Fast Switching G l Ease of Paralleling l Lead-Free ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination

 7.2. Size:229K  international rectifier
 irll014.pdf

PD - 90866A IRLL014 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 60V Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20 Fast Switching G Ease of Paralleling ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, r

 7.3. Size:168K  vishay
 sihll014 irll014.pdf

IRLL014, SiHLL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Surface Mount RDS(on) ( )VGS = 5.0 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 8.4 Dynamic dV/dt Rating Qgs (nC) 3.5 Logic-Level Gate Drive Qgd (nC) 6.0 RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Co

 7.4. Size:164K  vishay
 irll014 sihll014.pdf

IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 60 Available in tape and reel RDS(on) ( )VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate drive Qg max. (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 V Qgs (nC) 3.5 Available Fast switching Qgd (nC) 6.0 Ease of paralleling Configurat

 7.5. Size:162K  vishay
 irll014pbf sihll014.pdf

IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 60 Available in tape and reel RDS(on) ( )VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate drive Qg (Max.) (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 V Qgs (nC) 3.5 Available Fast switching Qgd (nC) 6.0 Ease of paralleling Configur