IRLL014N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLL014N
Маркировка: LL014N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.1 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 2.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.5 nC
Время нарастания (tr): 4.9 ns
Выходная емкость (Cd): 66 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.14 Ohm
Тип корпуса: SOT223
IRLL014N Datasheet (PDF)
irll014n.pdf
PD- 91499BIRLL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.14 Fast SwitchingG Fully Avalanche RatedID = 2.0ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.
irll014npbf.pdf
PD- 95154IRLL014NPbF l Surface Mountl Advanced Process Technology D DSS l Ultra Low On-Resistancel Dynamic dv/dt Rating DS(on) l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free D SDescription
irll014npbf.pdf
PD- 95154IRLL014NPbF l Surface Mountl Advanced Process Technology D DSS l Ultra Low On-Resistancel Dynamic dv/dt Rating DS(on) l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free D SDescription
auirll014n.pdf
AUTOMOTIVE GRADE AUIRLL014N HEXFET Power MOSFET Features VDSS Advanced Planar Technology 55V Low On-Resistance RDS(on) max. Logic Level Gate Drive 0.14 Dynamic dv/dt Rating ID 150C Operating Temperature 2.0A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant
irll014ntr.pdf
IRLL014NTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle
irll014pbf.pdf
PD - 95387IRLL014PbFHEXFET Power MOSFETl Surface MountDl Available in Tape & ReelVDSS = 60Vl Dynamic dv/dt Ratingl Logic-Level Gate Drivel RDS(on) Specified at VGS=4V & 5VRDS(on) = 0.20l Fast SwitchingGl Ease of Parallelingl Lead-FreeID = 2.7ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination
irll014.pdf
PD - 90866AIRLL014HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 60V Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5VRDS(on) = 0.20 Fast SwitchingG Ease of ParallelingID = 2.7ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, r
sihll014 irll014.pdf
IRLL014, SiHLL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Surface MountRDS(on) ()VGS = 5.0 V 0.20 Available in Tape and ReelQg (Max.) (nC) 8.4 Dynamic dV/dt RatingQgs (nC) 3.5 Logic-Level Gate DriveQgd (nC) 6.0 RDS(on) Specified at VGS = 4 V and 5 V Fast SwitchingCo
irll014 sihll014.pdf
IRLL014, SiHLL014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 60 Available in tape and reelRDS(on) ()VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate driveQg max. (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 VQgs (nC) 3.5Available Fast switchingQgd (nC) 6.0 Ease of parallelingConfigurat
irll014pbf sihll014.pdf
IRLL014, SiHLL014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 60 Available in tape and reelRDS(on) ()VGS = 5.0 V 0.20 Dynamic dV/dt rating Logic-level gate driveQg (Max.) (nC) 8.4 RDS(on) specified at VGS = 4 V and 5 VQgs (nC) 3.5Available Fast switchingQgd (nC) 6.0 Ease of parallelingConfigur
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