IRLL024N Todos los transistores

PD - 95221 IRLL024NPbF HEXFET Power MOSFET Surface Mount Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching RDS(on) = 0.065 G Fully Avalanche Rated Lead-Free ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

PD - 91895 IRLL024N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.065 Fast Switching G Fully Avalanche Rated ID = 3.1A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

AUTOMOTIVE GRADE AUIRLL024N Features HEXFET Power MOSFET Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 0.065 150 C Operating Temperature G Fast Switching Fully Avalanche Rated S ID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description

PD-94152 AUTOMOTIVE MOSFET IRLL024NQ Typical Applications HEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats D Cruise Control VDSS = 55V Air Bags Benefits RDS(on) = 0.065 Advanced Process Technology G Ultra Low On-Resistance 175 C Operating Temperature ID = 3.1A Repetitive Avalanche Allowed up to Tjmax S Dynamic dv/d

IRLL024NTR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET AB