All MOSFET. IRLL024N Datasheet

 

IRLL024N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLL024N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.4 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT223

 IRLL024N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLL024N Datasheet (PDF)

 ..1. Size:142K  international rectifier
 irll024npbf.pdf

IRLL024N IRLL024N

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 ..2. Size:114K  international rectifier
 irll024n.pdf

IRLL024N IRLL024N

PD - 91895IRLL024NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.065 Fast SwitchingG Fully Avalanche RatedID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

 ..3. Size:145K  infineon
 irll024npbf.pdf

IRLL024N IRLL024N

PD - 95221IRLL024NPbFHEXFET Power MOSFET Surface Mount Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.065G Fully Avalanche Rated Lead-FreeID = 3.1ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 0.1. Size:198K  international rectifier
 auirll024n.pdf

IRLL024N IRLL024N

AUTOMOTIVE GRADEAUIRLL024NFeatures HEXFET Power MOSFET Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Logic Level Gate Drive Dynamic dV/dT RatingRDS(on) max.0.065 150C Operating TemperatureG Fast Switching Fully Avalanche Rated SID 3.1A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescription

 0.2. Size:163K  international rectifier
 irll024nq.pdf

IRLL024N IRLL024N

PD-94152AUTOMOTIVE MOSFETIRLL024NQTypical ApplicationsHEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & SeatsD Cruise ControlVDSS = 55V Air BagsBenefitsRDS(on) = 0.065 Advanced Process TechnologyG Ultra Low On-Resistance 175C Operating TemperatureID = 3.1A Repetitive Avalanche Allowed up to TjmaxS Dynamic dv/d

 0.3. Size:822K  cn vbsemi
 irll024ntr.pdf

IRLL024N IRLL024N

IRLL024NTRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

Datasheet: IRLIZ34A , IRLIZ34G , IRLIZ34N , IRLIZ44A , IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRF9540 , IRLL110 , IRLL2703 , IRLL2705 , IRLL3303 , IRLM014A , IRLM110A , IRLM120A , IRLM210A .

 

 
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