IRF840LCSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF840LCSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-263

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IRF840LCSPBF Datasheet (PDF)

..1. Size:458K international rectifier
irf840lcspbf irf840lclpbf.pdf

PD- 95759IRF840LCSPbFIRF840LCLPbF Lead-Free8/24/04Document Number: 91068 www.vishay.com1IRF840LCS/LPbFDocument Number: 91068 www.vishay.com2IRF840LCS/LPbFDocument Number: 91068 www.vishay.com3IRF840LCS/LPbFDocument Number: 91068 www.vishay.com4IRF840LCS/LPbFDocument Number: 91068 www.vishay.com5IRF840LCS/LPbFDocument Number: 91068 www.vishay.com

..2. Size:196K vishay
irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

5.1. Size:173K international rectifier
irf840lcs.pdf

PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over con

6.1. Size:986K international rectifier
irf840lcpbf.pdf

PD - 94883IRF840LCPbF Lead-Free12/11/03Document Number: 91067 www.vishay.com1IRF840LCPbFDocument Number: 91067 www.vishay.com2IRF840LCPbFDocument Number: 91067 www.vishay.com3IRF840LCPbFDocument Number: 91067 www.vishay.com4IRF840LCPbFDocument Number: 91067 www.vishay.com5IRF840LCPbFDocument Number: 91067 www.vishay.com6IRF840LCPbFDocument Nu

6.2. Size:194K international rectifier
irf840lc.pdf

6.3. Size:198K vishay
irf840lc irf840lcpbf sihf840lc.pdf

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

6.4. Size:197K vishay
irf840lc sihf840lc.pdf

6.5. Size:206K inchange semiconductor
irf840lc.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSY

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