IRF840LCSPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF840LCSPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
TO-263
IRF840LCSPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF840LCSPBF
Datasheet (PDF)
..1. Size:458K international rectifier
irf840lcspbf irf840lclpbf.pdf 
PD- 95759IRF840LCSPbFIRF840LCLPbF Lead-Free8/24/04Document Number: 91068 www.vishay.com1IRF840LCS/LPbFDocument Number: 91068 www.vishay.com2IRF840LCS/LPbFDocument Number: 91068 www.vishay.com3IRF840LCS/LPbFDocument Number: 91068 www.vishay.com4IRF840LCS/LPbFDocument Number: 91068 www.vishay.com5IRF840LCS/LPbFDocument Number: 91068 www.vishay.com
..2. Size:196K vishay
irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio
5.1. Size:173K international rectifier
irf840lcs.pdf
PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over con
6.1. Size:986K international rectifier
irf840lcpbf.pdf
PD - 94883IRF840LCPbF Lead-Free12/11/03Document Number: 91067 www.vishay.com1IRF840LCPbFDocument Number: 91067 www.vishay.com2IRF840LCPbFDocument Number: 91067 www.vishay.com3IRF840LCPbFDocument Number: 91067 www.vishay.com4IRF840LCPbFDocument Number: 91067 www.vishay.com5IRF840LCPbFDocument Number: 91067 www.vishay.com6IRF840LCPbFDocument Nu
6.3. Size:198K vishay
irf840lc irf840lcpbf sihf840lc.pdf
IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com
6.4. Size:197K vishay
irf840lc sihf840lc.pdf
IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com
6.5. Size:206K inchange semiconductor
irf840lc.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSY
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