IRF840LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

PD- 95759IRF840LCSPbFIRF840LCLPbF Lead-Free8/24/04Document Number: 91068 www.vishay.com1IRF840LCS/LPbFDocument Number: 91068 www.vishay.com2IRF840LCS/LPbFDocument Number: 91068 www.vishay.com3IRF840LCS/LPbFDocument Number: 91068 www.vishay.com4IRF840LCS/LPbFDocument Number: 91068 www.vishay.com5IRF840LCS/LPbFDocument Number: 91068 www.vishay.com

PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over con

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IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSY