IRF840LPBF - описание и поиск аналогов

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

PD- 95759 IRF840LCSPbF IRF840LCLPbF Lead-Free 8/24/04 Document Number 91068 www.vishay.com 1 IRF840LCS/LPbF Document Number 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number 91068 www.vishay.com 4 IRF840LCS/LPbF Document Number 91068 www.vishay.com 5 IRF840LCS/LPbF Document Number 91068 www.vishay.com

PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85 Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET power MOSFETs achieve significant lower gate charge over con

PD - 94883 IRF840LCPbF Lead-Free 12/11/03 Document Number 91067 www.vishay.com 1 IRF840LCPbF Document Number 91067 www.vishay.com 2 IRF840LCPbF Document Number 91067 www.vishay.com 3 IRF840LCPbF Document Number 91067 www.vishay.com 4 IRF840LCPbF Document Number 91067 www.vishay.com 5 IRF840LCPbF Document Number 91067 www.vishay.com 6 IRF840LCPbF Document Nu

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Ultra Low Gate Charge RDS(on) ( )VGS = 10 V 0.85 Reduced Gate Drive Requirement Qg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operatio

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF840LC FEATURES With low gate drive requirements Ultra low gate charge Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications For DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY