IRF8707PBF Todos los transistores

 

IRF8707PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF8707PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.9 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de IRF8707PBF MOSFET

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Principales características: IRF8707PBF

 ..1. Size:248K  international rectifier
irf8707pbf.pdf pdf_icon

IRF8707PBF

PD - 96118A IRF8707PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 11.9m @VGS = 10V 30V 6.2nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 Benefits S D l Very Low Gate Charge 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4

 0.1. Size:218K  international rectifier
irf8707pbf-1.pdf pdf_icon

IRF8707PBF

IRF8707PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 11.9 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 17.5 (@V = 4.5V) GS 4 5 G D Qg (typical) 6.2 nC SO-8 ID Top View 11.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing R

 7.1. Size:246K  international rectifier
irf8707gpbf.pdf pdf_icon

IRF8707PBF

PD - 96264 IRF8707GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 11.9m @VGS = 10V 30V 6.2nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D l Very Low Gate Charge 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 l Ultra-Low Gate Impedance S D

 9.1. Size:227K  international rectifier
irf8788pbf.pdf pdf_icon

IRF8707PBF

PD - 97137A IRF8788PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power 30V 2.8m l Synchronous Rectifier MOSFET for @VGS = 10V 44nC Isolated DC-DC Converters Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4

Otros transistores... IRF840LCLPBF , IRF840LCPBF , IRF840LCSPBF , IRF840LPBF , IRF840PBF , IRF840SPBF , IRF8513PBF , IRF8707GPBF , IRF9640 , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF , IRF8721PBF , IRF8721PBF-1 , IRF8734PBF .

History: IRF8788PBF-1 | IRF8721PBF-1

 

 
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