IRLL110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 90869AIRLL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate DriveRDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5VG Fast SwitchingID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswit

PD - 95222IRLL110PbFHEXFET Power MOSFET Surface Mount Available in Tape & Reel D Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated Logic-Level Gate DriveRDS(on) = 0.54 RDS(on)Specified at VGS= 4V & 5VG Fast Switching Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination o

IRLL110, SiHLL110Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 100 Available in Tape and ReelAvailableRDS(on) ()VGS = 5.0 V 0.54 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 6.1 Repetitive Avalanche RatedCOMPLIANTQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Sin

IRLL110, SiHLL110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 100 Available in tape and reel Dynamic dV/dt ratingRDS(on) ()VGS = 5.0 V 0.54 Repetitive avalanche ratedQg (Max.) (nC) 6.1 Logic-level gate driveQgs (nC) 2.6 RDS(on) specified at VGS = 4 V and 5 V AvailableQgd (nC) 3.3 Fast switchingC

IRLL110TRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET