IRF8714PBF-1 Todos los transistores

 

IRF8714PBF-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF8714PBF-1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.9 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de IRF8714PBF-1 MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: IRF8714PBF-1

 ..1. Size:220K  international rectifier
irf8714pbf-1.pdf pdf_icon

IRF8714PBF-1

IRF8714PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 8.7 m 2 7 (@V = 10V) S D GS Qg (typical) 8.1 nC 3 6 S D ID 4 5 14 A G D (@T = 25 C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout

 4.1. Size:250K  international rectifier
irf8714pbf.pdf pdf_icon

IRF8714PBF-1

PD - 96116 IRF8714PbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.7m @VGS = 10V 30V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A 1 8 l Very Low Gate Charge S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully

 7.1. Size:249K  international rectifier
irf8714gpbf.pdf pdf_icon

IRF8714PBF-1

PD - 96263 IRF8714GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.7m @VGS = 10V 30V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Full

 9.1. Size:227K  international rectifier
irf8788pbf.pdf pdf_icon

IRF8714PBF-1

PD - 97137A IRF8788PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power 30V 2.8m l Synchronous Rectifier MOSFET for @VGS = 10V 44nC Isolated DC-DC Converters Benefits A A l Very Low Gate Charge 1 8 S D l Very Low RDS(on) at 4.5V VGS 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4

Otros transistores... IRF840PBF , IRF840SPBF , IRF8513PBF , IRF8707GPBF , IRF8707PBF , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , EMB04N03H , IRF8721GPBF , IRF8721PBF , IRF8721PBF-1 , IRF8734PBF , IRF8736PBF , IRF8736PBF-1 , IRF8788PBF , IRF8788PBF-1 .

 

 
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