IRF8734PBF Todos los transistores

PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 3.5m @VGS = 10V 30V 20nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Volt

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

IRF8736PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 4.8 m 2 7 (@V = 10V) GS S D Qg (typical) 17 nC 3 6 S D ID 4 5 18 A G D (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n

AUIRF8739L2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 0.35m other Heavy Load Applications max. 0.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 545A Low Parasitic Parameters Qg 375n

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 4.8m @VGS = 10V 30V 17nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage

IRF8736TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch