IRF8736PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8736PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 449 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET IRF8736PBF
IRF8736PBF Datasheet (PDF)
irf8736pbf.pdf
PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage
irf8736pbf.pdf
PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage
irf8736pbf-1.pdf
IRF8736PbF-1HEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 4.8 m2 7(@V = 10V)GS S DQg (typical) 17 nC3 6S DID 4 518 AG D(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Pack
auirf8736m2.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
auirf8736m2tr.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
irf8736tr.pdf
IRF8736TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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Recientemente añadidas las descripciónes de los transistores:
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