IRF8736PBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF8736PBF-1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 449 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm

Encapsulados: SO-8

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IRF8736PBF-1 datasheet

 ..1. Size:224K  international rectifier
irf8736pbf-1.pdf pdf_icon

IRF8736PBF-1

IRF8736PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 4.8 m 2 7 (@V = 10V) GS S D Qg (typical) 17 nC 3 6 S D ID 4 5 18 A G D (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack

 4.1. Size:247K  international rectifier
irf8736pbf.pdf pdf_icon

IRF8736PBF-1

PD - 97120 IRF8736PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 4.8m @VGS = 10V 30V 17nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage

 7.1. Size:497K  international rectifier
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IRF8736PBF-1

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

 7.2. Size:497K  international rectifier
auirf8736m2.pdf pdf_icon

IRF8736PBF-1

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete

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