IRF8736PBF-1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF8736PBF-1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 449 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: SO-8
IRF8736PBF-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF8736PBF-1 Datasheet (PDF)
irf8736pbf-1.pdf
IRF8736PbF-1HEXFET Power MOSFETVDS 30 VAA1 8S DRDS(on) max 4.8 m2 7(@V = 10V)GS S DQg (typical) 17 nC3 6S DID 4 518 AG D(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Pack
irf8736pbf.pdf
PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage
irf8736pbf.pdf
PD - 97120IRF8736PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook4.8m @VGS = 10V30V 17nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltage
auirf8736m2.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
auirf8736m2tr.pdf
AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete
irf8736tr.pdf
IRF8736TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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