IRF9317PBF Todos los transistores

PD - 97465 IRF9317PbF HEXFET Power MOSFET VDS -30 V S 18 D RDS(on) max 6.6 m S 27 D (@VGS = -10V) RDS(on) max S 3 6 D 10.2 m (@VGS = -4.5V) G 4 5 D Qg (typical) 31 nC SO-8 ID -16 A (@TA = 25 C) Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor

IRF9317TR P-Channel 30 V (D-S) MOSFET Description This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. D D It can be used in a wide variety of applications. D S1 S S Features G 1) VDS=-30V,ID=-15A,RDS(ON)

IRF9310PbF-1 HEXFET Power MOSFET VDS -30 V RDS(on) max S 18 D 4.6 (@V = -10V) GS m S 27 D RDS(on) max 6.8 (@V = -4.5V) GS S 3 6 D Qg (typical) 58 nC G 4 5 D ID -20 A SO-8 (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halo

PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS -30 V RDS(on) max 4.6 m (@VGS = 10V) ID -20 A (@TA = 25 C) SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits Features Low RDSon ( 4.6m ) Lower Conduction Losses results in Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS

IRF9310TRPBF&-9 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2