IRLL2705 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLL2705
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 5.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOT223

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IRLL2705 Datasheet (PDF)

..1. Size:160K international rectifier
irll2705.pdf

PD- 91380BIRLL2705HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 55V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.04 Ease of ParallelingG Advanced Process TechnologyID = 3.8A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

..2. Size:220K international rectifier
irll2705pbf.pdf

PD- 95338IRLL2705PbFHEXFET Power MOSFETl Surface Mountl Dynamic dv/dt RatingDl Logic-Level Gate DriveVDSS = 55Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.04l Advanced Process TechnologyGl Ultra Low On-ResistanceID = 3.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievee

..3. Size:220K infineon
irll2705pbf.pdf

0.1. Size:246K international rectifier
auirll2705.pdf

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S

0.2. Size:820K cn vbsemi
irll2705tr.pdf

IRLL2705TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

7.1. Size:138K international rectifier
irll2703pbf.pdf

PD - 95337IRLL2703PBFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.045l Fully Avalanche RatedGl Lead-FreeID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

7.2. Size:113K international rectifier
irll2703.pdf

PD - 91894IRLL2703HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.045 Fast SwitchingG Fully Avalanche RatedID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.

Otros transistores... IRLIZ44A , IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRFP250N , IRLL3303 , IRLM014A , IRLM110A , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 .

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