IRLL2705 Datasheet and Replacement

PD- 91380BIRLL2705HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 55V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.04 Ease of ParallelingG Advanced Process TechnologyID = 3.8A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

PD- 95338IRLL2705PbFHEXFET Power MOSFETl Surface Mountl Dynamic dv/dt RatingDl Logic-Level Gate DriveVDSS = 55Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.04l Advanced Process TechnologyGl Ultra Low On-ResistanceID = 3.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievee

AUTOMOTIVE GRADEAUIRLL2705FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-Resistance V(BR)DSS55Vl Logic Level Gate DriveRDS(on) max.l Dynamic dv/dt Rating 0.04Gl 150C Operating TemperatureSID3.8Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified*S

IRLL2705TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

PD - 95337IRLL2703PBFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.045l Fully Avalanche RatedGl Lead-FreeID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resist

PD - 91894IRLL2703HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.045 Fast SwitchingG Fully Avalanche RatedID = 3.9ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.