IRF9520NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a