IRF9520NLPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9520NLPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO-262

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IRF9520NLPBF datasheet

 ..1. Size:418K  international rectifier
 irf9520nlpbf.pdf pdf_icon

IRF9520NLPBF

PD- 95764 IRF9520NSPbF IF9520NLPbF Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/LPbF 4 www.irf.com IRF9520NS/LPbF www.irf.com 5 IRF9520NS/LPbF 6 www.irf.com IRF9520NS/LPbF www.irf.com 7 IRF9520NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS A

 5.1. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NLPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 6.1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NLPBF

PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

 6.2. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NLPBF

PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

MOSTRAR MÁS

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