All MOSFET. IRF9520NLPBF Datasheet

 

IRF9520NLPBF Datasheet and Replacement


   Type Designator: IRF9520NLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-262
 

 IRF9520NLPBF substitution

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IRF9520NLPBF Datasheet (PDF)

 ..1. Size:418K  international rectifier
 irf9520nlpbf.pdf pdf_icon

IRF9520NLPBF

PD- 95764IRF9520NSPbFIF9520NLPbF Lead-Freewww.irf.com 104/26/05IRF9520NS/LPbF2 www.irf.comIRF9520NS/LPbFwww.irf.com 3IRF9520NS/LPbF4 www.irf.comIRF9520NS/LPbFwww.irf.com 5IRF9520NS/LPbF6 www.irf.comIRF9520NS/LPbFwww.irf.com 7IRF9520NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS A

 5.1. Size:155K  international rectifier
 irf9520nl.pdf pdf_icon

IRF9520NLPBF

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

 6.1. Size:160K  international rectifier
 irf9520npbf.pdf pdf_icon

IRF9520NLPBF

PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res

 6.2. Size:155K  international rectifier
 irf9520ns.pdf pdf_icon

IRF9520NLPBF

PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

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Datasheet: IRF9383MPBF , IRF9388PBF , IRF9389 , IRF9392PBF , IRF9393PBF , IRF9395MPBF , IRF9410PBF , IRF9510SPBF , 2SK3878 , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 .

Keywords - IRF9520NLPBF MOSFET datasheet

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