SSH4N90 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSH4N90  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm

Encapsulados: TO-3P

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SSH4N90 datasheet

 ..1. Size:165K  fairchild semi
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SSH4N90

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 0.1. Size:208K  samsung
 ssh4n90as.pdf pdf_icon

SSH4N90

SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N90

 9.2. Size:211K  samsung
 ssh4n80as.pdf pdf_icon

SSH4N90

SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

MOSTRAR MÁS

Otros transistores... IRF9520SPBF, IRF9530-220M, SSH10N80, SSH11N90, SSH3N90, SSH4N55, SSH4N60, SSH4N80, IRF9540N, SSH5N90, SSH60N08, SSH6N80, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH