All MOSFET. SSH4N90 Datasheet

 

SSH4N90 Datasheet and Replacement


   Type Designator: SSH4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
   Package: TO-3P
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SSH4N90 Datasheet (PDF)

 ..1. Size:165K  fairchild semi
 ssh4n90.pdf pdf_icon

SSH4N90

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 0.1. Size:208K  samsung
 ssh4n90as.pdf pdf_icon

SSH4N90

SSH4N90ASAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSH4N90

 9.2. Size:211K  samsung
 ssh4n80as.pdf pdf_icon

SSH4N90

SSH4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2. (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

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Keywords - SSH4N90 MOSFET datasheet

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