IRLM110A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

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