IRLM110A Todos los transistores

 

IRLM110A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLM110A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm

Encapsulados: SOT223

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IRLM110A datasheet

 ..1. Size:227K  fairchild semi
irlm110a.pdf pdf_icon

IRLM110A

IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 Lower RDS(ON) 0.336 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum R

 ..2. Size:220K  samsung
irlm110a.pdf pdf_icon

IRLM110A

IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.336 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

 9.1. Size:229K  fairchild semi
irlm120a.pdf pdf_icon

IRLM110A

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 n Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

 9.2. Size:225K  samsung
irlm120a.pdf pdf_icon

IRLM110A

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

Otros transistores... IRLL014 , IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRLL2705 , IRLL3303 , IRLM014A , IRF4905 , IRLM120A , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 .

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