IRLM110A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLM110A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.5 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 50 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.44 Ohm
Тип корпуса: SOT223
IRLM110A Datasheet (PDF)
irlm110a.pdf
IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R
irlm110a.pdf
IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo
irlm120a.pdf
IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlm120a.pdf
IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo
irlm120a.pdf
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Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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