SSM04N70BGF-H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM04N70BGF-H 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.3 nS
Cossⓘ - Capacitancia de salida: 65 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO-220FM
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SSM04N70BGF-H datasheet
ssm04n70bgf-h.pdf
SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7
ssm04n70bgf-a.pdf
SSM04N70BGF-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7
ssm04n70bgp-a.pdf
SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220 The SSM04N70B
ssm0410.pdf
SSM0410 3.5 A, 100V, RDS(ON) 220m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for
Otros transistores... SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH, SSM03N70GJ, SSM03N70GP-H, SSM04N70BGF-A, 12N60, SSM04N70BGP-A, SSM09N70GP-A, SSM09N90CGW, SSM09N90GW, SSM1333GU, SSM2030GM, SSM2030SD, SSM20N03S
History: HGB120N10A | AP60N02NF | PTA26N60 | SSM5H11TU | PTF7N65 | DSD090N10L3A
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