SSM04N70BGF-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSM04N70BGF-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8.3 ns
Cossⓘ - Выходная емкость: 65 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
Тип корпуса: TO-220FM
- подбор MOSFET транзистора по параметрам
SSM04N70BGF-H Datasheet (PDF)
ssm04n70bgf-h.pdf

SSM04N70BGF-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7
ssm04n70bgf-a.pdf

SSM04N70BGF-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7
ssm04n70bgp-a.pdf

SSM04N70BGP-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGP-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220The SSM04N70B
ssm0410.pdf

SSM0410 3.5 A, 100V, RDS(ON) 220m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP02T11T | BUK455-100B | SSF65R420S2 | FDG6320C | SI7413DN | STB10NK60ZT4 | NCEAP016N10LL
History: NCEP02T11T | BUK455-100B | SSF65R420S2 | FDG6320C | SI7413DN | STB10NK60ZT4 | NCEAP016N10LL



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