SSM09N90CGW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM09N90CGW  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 516 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO-247

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SSM09N90CGW datasheet

 ..1. Size:624K  silicon standard
 ssm09n90cgw.pdf pdf_icon

SSM09N90CGW

SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90CGW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.4 suitable for high voltage applications such as AC/DC converters and offline power supplies. I 7.6A D The SSM09N90CGW is in a TO-247 (TO-3P) package, Pb-free; RoHS-com

 6.1. Size:628K  silicon standard
 ssm09n90gw.pdf pdf_icon

SSM09N90CGW

SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90GW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.2 suitable for high voltage applications such as AC/DC converters and offline power supplies. I 8.6A D The SSM09N90GW is in a TO-247 (TO-3P) package, Pb-free; RoHS-compli

 8.1. Size:568K  silicon standard
 ssm09n70gp-a.pdf pdf_icon

SSM09N90CGW

SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N70GP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 0.75 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 9A D Pb-free; RoHS-compliant TO-220 The SSM09N70GP

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