SSM09N90CGW Datasheet and Replacement
Type Designator: SSM09N90CGW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 516 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-247
SSM09N90CGW substitution
SSM09N90CGW Datasheet (PDF)
ssm09n90cgw.pdf

SSM09N90CGWN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N90CGW acheives fast switching performanceBVDSS 900Vwith low gate charge without a complex drive circuit. It isRDS(ON) 1.4suitable for high voltage applications such as AC/DCconverters and offline power supplies.I 7.6AD The SSM09N90CGW is in a TO-247 (TO-3P) package,Pb-free; RoHS-com
ssm09n90gw.pdf

SSM09N90GWN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N90GW acheives fast switching performanceBVDSS 900Vwith low gate charge without a complex drive circuit. It isRDS(ON) 1.2suitable for high voltage applications such as AC/DCconverters and offline power supplies.I 8.6AD The SSM09N90GW is in a TO-247 (TO-3P) package,Pb-free; RoHS-compli
ssm09n70gp-a.pdf

SSM09N70GP-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N70GP-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 0.75is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 9AD Pb-free; RoHS-compliant TO-220The SSM09N70GP
Datasheet: SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H , SSM04N70BGF-A , SSM04N70BGF-H , SSM04N70BGP-A , SSM09N70GP-A , IRF1407 , SSM09N90GW , SSM1333GU , SSM2030GM , SSM2030SD , SSM20N03S , SSM20P02GH , SSM20P02GJ , SSM2301GN .
History: SSM2030GM
Keywords - SSM09N90CGW MOSFET datasheet
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History: SSM2030GM



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