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IRLM120A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLM120A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: SOT223

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IRLM120A datasheet

 ..1. Size:229K  fairchild semi
 irlm120a.pdf pdf_icon

IRLM120A

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 n Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

 ..2. Size:225K  samsung
 irlm120a.pdf pdf_icon

IRLM120A

IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.176 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

 ..3. Size:347K  onsemi
 irlm120a.pdf pdf_icon

IRLM120A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:227K  fairchild semi
 irlm110a.pdf pdf_icon

IRLM120A

IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A(Max.) @ VDS = 100V 2 Lower RDS(ON) 0.336 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum R

MOSTRAR MÁS

Otros transistores... IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRLL2705 , IRLL3303 , IRLM014A , IRLM110A , IRLB4132 , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 , IRLML6401 .

 

 

 


 
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