IRLM120A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLM120A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET IRLM120A

IRLM120A Datasheet (PDF)

..1. Size:229K fairchild semi
irlm120a.pdf

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

..2. Size:225K samsung
irlm120a.pdf

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

..3. Size:347K onsemi
irlm120a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:227K fairchild semi
irlm110a.pdf

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

9.2. Size:220K samsung
irlm110a.pdf

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

Otros transistores... IRLL014N , IRLL024N , IRLL110 , IRLL2703 , IRLL2705 , IRLL3303 , IRLM014A , IRLM110A , SPP20N60C3 , IRLM210A , IRLM220A , IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 , IRLML6401 .

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