IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.22 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 2.3 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = 100V2n Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

IRLM120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.176 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A(Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum R

IRLM110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating AreaSOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V2 Lower RDS(ON) : 0.336 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo