SSM2602GY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM2602GY  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 144 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT-26

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SSM2602GY datasheet

 ..1. Size:204K  silicon standard
 ssm2602gy.pdf pdf_icon

SSM2602GY

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20V S Lower on-resistance D RDS(ON) 34m D Surface mount package ID 6.3A RoHS Compliant G D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

 7.1. Size:169K  silicon standard
 ssm2602y.pdf pdf_icon

SSM2602GY

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V S D Low on-resistance RDS(ON) 34m D Surface mount package ID 5.3A G D SOT-26 D Description These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance D in an extremely efficient and cost-effective device. The SOT-26 package

 8.1. Size:215K  silicon standard
 ssm2603gy.pdf pdf_icon

SSM2602GY

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S BVDSS -20V Simple Drive Requirement D D RDS(ON) 65m Small Package Outline Surface Mount Device G ID -5.0A D SOT-26 D DESCRIPTION D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The

 8.2. Size:207K  silicon standard
 ssm2605gy.pdf pdf_icon

SSM2602GY

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY S Fast Switching Characteristic BVDSS -30V D Lower Gate Charge D RDS(ON) 80m Small Footprint & Low Profile Package G ID - 4A D SOT-26 D DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

MOSTRAR MÁS

Otros transistores... SSM2310GN, SSM2312GN, SSM2313GN, SSM2314GN, SSM2316GN, SSM2318GEN, SSM25T03GH, SSM25T03GJ, 2N60, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY, SSM2761P-A, SSM3310GH, SSM3310GJ, SSM3J331R