SSM2602GY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM2602GY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 6.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.7
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 144
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOT-26
SSM2602GY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM2602GY
Datasheet (PDF)
..1. Size:204K silicon standard
ssm2602gy.pdf
SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness
7.1. Size:169K silicon standard
ssm2602y.pdf
SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package
8.1. Size:215K silicon standard
ssm2603gy.pdf
SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe
8.2. Size:207K silicon standard
ssm2605gy.pdf
SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d
8.3. Size:152K silicon standard
ssm2603y.pdf
SSM2603YP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -20VSDSmall package outline R 65mDS(ON)DSurface-mount device ID - 4.2AGDSOT-26DDescriptionDThese power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistancein an extremely efficient and cost-effective device.GThe SOT-2
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