All MOSFET. SSM2602GY Datasheet

 

SSM2602GY Datasheet and Replacement


   Type Designator: SSM2602GY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-26
 

 SSM2602GY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSM2602GY Datasheet (PDF)

 ..1. Size:204K  silicon standard
 ssm2602gy.pdf pdf_icon

SSM2602GY

SSM2602GYN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive BVDSS 20VSLower on-resistance DRDS(ON) 34mDSurface mount package ID 6.3ARoHS Compliant GDSOT-26 DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness

 7.1. Size:169K  silicon standard
 ssm2602y.pdf pdf_icon

SSM2602GY

SSM2602YN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSDLow on-resistance RDS(ON) 34mDSurface mount package ID 5.3AGDSOT-26DDescriptionThese Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistanceDin an extremely efficient and cost-effective device.The SOT-26 package

 8.1. Size:215K  silicon standard
 ssm2603gy.pdf pdf_icon

SSM2602GY

SSM2603GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SBVDSS -20VSimple Drive Requirement DDRDS(ON) 65mSmall Package Outline Surface Mount Device GID -5.0ADSOT-26 DDESCRIPTION DAdvanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. GThe

 8.2. Size:207K  silicon standard
 ssm2605gy.pdf pdf_icon

SSM2602GY

SSM2605GYP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY SFast Switching Characteristic BVDSS -30VDLower Gate Charge D RDS(ON) 80mSmall Footprint & Low Profile Package G ID - 4ADSOT-26DDESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness d

SHOW MORE

Datasheet: SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , SSM2316GN , SSM2318GEN , SSM25T03GH , SSM25T03GJ , 7N60 , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A , SSM3310GH , SSM3310GJ , SSM3J331R .

Keywords - SSM2602GY MOSFET datasheet

 SSM2602GY cross reference
 SSM2602GY equivalent finder
 SSM2602GY lookup
 SSM2602GY substitution
 SSM2602GY replacement

 

 
Back to Top

 


 
.