SSM3K2615R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3K2615RMOSFETs Silicon N-Channel MOSSSM3K2615RSSM3K2615RSSM3K2615RSSM3K2615R1. Applications1. Applications1. Applications1. Applications Load Switches Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 Qualified (Note1).(2) 3.3-V gate drive voltage.(3) Low drain-source on-resistance: RDS(ON) = 380 m (typ.) (@VGS = 3.3 V, ID =

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 2.10.1Ron = 83 m (max) (@VGS = 10V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drainsource voltage VDS 30 VGatesource volta

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) 2.10.1Ron = 74 m (max) (@VGS = 2.5 V) 1.70.1Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1

SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive +0.2 Low ON-resistance : Ron = 77 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 50 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source voltage

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : Ron = 1.52 (max) (@VGS = 1.5 V) : Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) : Ron = 0.63 (max) (@VGS = 5.0 V) Absolute Maximum Rati

SSM3K336RMOSFETs Silicon N-Channel MOSSSM3K336RSSM3K336RSSM3K336RSSM3K336R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K315T High-Speed Switching Applications Unit: mm 4.5-V drive +0.2 Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 27.6 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source

SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 135m (max) (@VGS = 2.5 V) 1.70.1Ron = 100m (max) (@VGS = 4.5 V) Lead(Pb)-free 1Maximum Ratings (Ta = 25C) 2 3Characteristic Symbol Rating UnitDrain-Source voltage VDS 30 VGate

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 30 VGate-sour

SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.11.70.1 1.8V drive Low ON-resistance: Ron = 286m (max) (@VGS = 1.8V) : Ron = 167m (max) (@VGS = 2.5V) 1: Ron = 123m (max) (@VGS = 4.0V) 32Absolute Maximum Ratings (Ta = 25C

SSM3K344RMOSFETs Silicon N-Channel MOSSSM3K344RSSM3K344RSSM3K344RSSM3K344R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.5 V drive(2) Low drain-source on-resistance: RDS(ON) = 51 m (Typ.) (@VGS = 4.5 V) RDS(ON) = 63 m (Typ.) (@VGS = 2.5 V)

SSM3K361RMOSFETs Silicon N-channel MOS (U-MOS-H)SSM3K361R1. Applications Power Management Switches DC-DC Converters2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) 175 MOSFET(3) 4.5 V drive(4) Low drain-source on-resistance: RDS(ON) = 65 m (typ.) (@VGS = 4.5 V) RDS(ON) = 51 m (typ.) (@VGS = 10 V)3. Packaging and Pin As

SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Unit: mm2.1 0.1 Small package 1.25 0.1 Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 12 3Maximum Ratings (Ta = 25C) Characteris

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit: mmHigh Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDr

SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Unit: mmAnalog Switch Applications Small package2.10.1 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) 1.250.1 : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 1Absolute Maximum Ratings (Ta = 25C) 23Characteri

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 120 m (max) (VGS = 4 V) : Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3+0.25 Small package 1.5-0.15 Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) 1: Ron = 7.0 (max) (@VGS = 2.5 V) 2 3Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai

SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package+0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Absolute Maximum Ratings (Ta = 25C)

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr

SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT High Speed Switching Applications Analog Switch Applications Unit : mm 1.5Vdrive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin

SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm1.20.05 Compact package suitable for high-density mounting 0.80.05 Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1Absolute Maximum Ratings (Ta = 25C) 3Chara

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit: mm Low on resistance : Ron = 0.8 max (@VGS = 4 V) : Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGate-source

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit: mm 1.5-V drive 1.20.05 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 0.80.05: Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V)

SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 50 VGate-S

SSM3K35CTCMOSFETs Silicon N-Channel MOSSSM3K35CTCSSM3K35CTCSSM3K35CTCSSM3K35CTC1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2-V gate drive voltage.(2) Low drain-source on-resistanceRDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA)RDS(ON) = 3.1

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) +0.22.8-0.3Ron = 43 m (max) (@VGS = 1.8 V) +0.2Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) 1.70.1Ron = 83 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGateso

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 410 m (max) (@VGS = 4V) 1.70.1Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 20 VGates

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

SSM3K59CTBMOSFETs Silicon N-Channel MOSSSM3K59CTBSSM3K59CTBSSM3K59CTBSSM3K59CTB1. Applications1. Applications1. Applications1. Applications DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 250 m (typ.) (@VGS = 1.8 V, ID = 0.2 A) RDS(ON) = 210 m (typ.) (@VGS = 2.5 V,

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU High-Speed Switching Applications Power Management Switch Applications UNIT: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : Ron = 360 m (max) (@VGS = 4.0V) : Ron = 217 m (max) (@VGS = 10V) 132Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Uni

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm1.20.05 Optimum for high-density mounting in small packages 0.80.05 Low on-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1Absolute Maximum Ratings (Ta = 25C) 3Char

SSM3K56MFVMOSFETs Silicon N-Channel MOSSSM3K56MFVSSM3K56MFVSSM3K56MFVSSM3K56MFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

SSM3K37MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K37MFV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 0.80.05 1.5-V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 1 RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) 2

SSM3K35AMFVMOSFETs Silicon N-Channel MOSSSM3K35AMFVSSM3K35AMFVSSM3K35AMFVSSM3K35AMFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2 V drive(2) Low drain-source on-resistance: RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 (max) (@

SSM3K03FE NMOS SSM3K03FE : mm VthCMOS : Vth = 0.7~1.3 V

SSM3K7002CFUMOSFETs Silicon N-Channel MOSSSM3K7002CFUSSM3K7002CFUSSM3K7002CFUSSM3K7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) Ron = 43 m (max) (@VGS = 1.8 V) 2.10.1Ron = 32 m (max) (@VGS = 2.5 V) 1.70.1Ron = 28 m (max) (@VGS = 4.0 V) Absol

SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.050.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symb

SSM3K56FSMOSFETs Silicon N-Channel MOSSSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Unit: mmAnalog Switch Applications 0.60.05 Optimum for high-density mounting in small packages 0.50.03 Low ON-resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Ch

SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications Unit: mm 1.8 V drive 2.10.1 Low ON-resistance: Ron = 134 m (max) (@VGS = 1.8V) 1.70.1Ron = 90 m (max) (@VGS = 2.5V) Ron = 74 m (max) (@VGS = 4.0V) 1 Lead(Pb)-free 2 3Absolute Maximum Ra

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m (max) (@VGS = 1.8 V) 1.70.1Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.52.5-0.3 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) +0.251.5-0.15: RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) 1Absolute Maximum Rating

SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGat

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

SSM3K37FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37FS High Speed Switching Applications Analog Switch Applications Unit: mm 1.5Vdrive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Rating

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.20.050.80.05Absolute Maximum Ratings (Ta = 25C) 1Characteristics Symbol Rating Unit3Drain-Source voltage VDSS 30 V

SSM3K72CTCMOSFETs Silicon N-Channel MOSSSM3K72CTCSSM3K72CTCSSM3K72CTCSSM3K72CTC1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD protected gate(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V) RDS(ON) = 3.1 (typ.) (@VGS = 5 V) RDS(ON) = 3.2

SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter Unit: mmHigh Speed Switching Applications Small Package Low ON-resistance : Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) High speed : ton = 21 ns : toff = 16 ns Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Unit: mmUnit: mm Low ON-resistance: Ron = 304 m (max) (@VGS = 1.5 V) 2.10.1Ron = 211 m (max) (@VGS = 1.8 V) 1.70.1Ron = 161 m (max) (@VGS = 2.5 V) Ron = 123 m (max) (@VGS = 4.0 V) 1

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit: mm+0.2 4.5 V drive 2.8-0.3 Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.21.6-0.1: RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Sy

SSM3K56ACTMOSFETs Silicon N-Channel MOSSSM3K56ACTSSM3K56ACTSSM3K56ACTSSM3K56ACT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON)

SSM3K318RMOSFETs Silicon N-Channel MOSSSM3K318RSSM3K318RSSM3K318RSSM3K318R1. Applications1. Applications1. Applications1. Applications Load Switches Ultra-High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS

SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit: mm1.20.05 With built-in gate-source resistor: RGS = 1 M (typ.) 0.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com

SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) : RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 154m (max) (@VGS = 1.8 V) 1.70.1Ron = 99m (max) (@VGS = 2.5 V) Ron = 71m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit: mm 1.8V drive Low on-resistance : Ron = 47m (max) (@VGS = 1.8V) : Ron = 35m (max) (@VGS = 2.5V) : Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit: mm Small Package Low on Resistance: Ron = 120 m (max) (@VGS = 4 V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 (max) (@V = 4 V) on GS: R = 7.0 (max) (@V = 2.5 V) on GSMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating Uni

SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: Ron = 140 m (max) (@VGS = 1.5 V) Ron = 93 m (max) (@VGS = 1.8 V) 2.10.1Ron = 63 m (max) (@VGS = 2.5 V) 1.70.1Ron = 48 m (max) (@VGS = 4.0 V) Absolu

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 Suitable for high-density mounting due to compact package 0.80.05 Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) 1Absolute Max

SSM3K335RMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM3K335RSSM3K335RSSM3K335RSSM3K335R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 38 m (max) (@VGS = 10 V) RDS(ON) = 56 m

SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU High-Speed Switching Applications 4.0 V drive Unit: mm Low ON-resistance: Ron = 43 m (max) (@VGS = 4.0 V) Ron = 32 m (max) (@VGS = 10 V) 2.10.11.70.1Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1Drain-Source voltage VDSS 30 VGate-Source voltag

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit: mmHigh-Speed Switching Applications Unit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter Unit: mmHigh Speed Switching Applications Small Package Low ON-resistance: Ron = 39 m (max) (@VGS = 10 V) : Ron = 57 m (max) (@VGS = 4.5 V) High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbo

SSM3K339RMOSFETs Silicon N-Channel MOSSSM3K339RSSM3K339RSSM3K339RSSM3K339R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155

SSM3K337RMOSFETs Silicon N-Channel MOSSSM3K337RSSM3K337RSSM3K337RSSM3K337R1. Applications1. Applications1. Applications1. Applications Relay Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 Qualified (Note1).(2) 4.0-V gate drive voltage.(3) Low drain-source on-resistance: RDS(ON) = 200 m (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 m

SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 43m (max) (@VGS = 4V) +0.22.8-0.3 : Ron = 32m (max) (@VGS = 10V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGat

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

SSM3K56CTMOSFETs Silicon N-Channel MOSSSM3K56CTSSM3K56CTSSM3K56CTSSM3K56CT1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V) RDS(ON) = 300 m (max) (@VGS = 2.5 V) RDS(ON) = 48

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 289 m (max) (@VGS = 1.8 V) : RDS(ON) = 170 m (max) (@VGS = 2.5 V) : RDS(ON) = 126 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characte

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = 3.3V) 1.70.1Ron = 200m (max) (@VGS = 4V) Ron = 110m (max) (@VGS = 10V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

SSM3K48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM3K48FU Load Switching Applications Unit: mm 2.5-V drive Low ON-resistance: RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 20 V

SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K131TU High-Speed Switching Applications Unit: mm 4.5-V drive Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.10.1: Ron = 27.6 m (max) (@VGS = 10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Source voltage VDSS

SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.05 0.80.05 2.5-V gate drive High input impedance 1 Low gate threshold voltage: Vth = 0.7 to 1.3 V Optimum for high-density mounting in small packages 32Absolute Maximum Ratings (Ta = 25C) Char

SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV High-Speed Switching Applications Unit: mm Analog Switch Applications 1.20.05 1.2 V drive 0.80.05 Low ON-resistance : Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) 1: Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) 23Absolu

SSM3K345RMOSFETs Silicon N-Channel MOSSSM3K345RSSM3K345RSSM3K345RSSM3K345R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.5 V drive(2) Low drain-source on-resistance: RDS(ON) = 33 m (max) (@VGS = 4.5 V) RDS(ON) = 45 m (max) (@VGS = 2.5 V) R

SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3 Small package +0.251.5-0.15 Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) 1: Ron = 3.0 (max) (@VGS = 10 V) 2 3Maximum Ratings (Ta = 25C) Charact

SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source vol

SSM3K72KFSMOSFETs Silicon N-Channel MOSSSM3K72KFS1. Applications High-Speed Switching2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 (typ.) (@VGS = 4.5 V)3. Packaging and Internal Circuit1: Gate2: Source

SSM3K04FS NMOS SSM3K04FS : mm : RGS = 1 M (typ.) VthCMOS : Vth = 0.7~1.3 V

SSM3K44FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating U

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 2.10.1: Ron = 1.14 (max) (@VGS = 1.8 V) 1.70.1: Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1: Ron = 0.63 (max) (@VGS = 5.0 V) 3

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDS 20 VGate-

SSM3K324RMOSFETs Silicon N-Channel MOSSSM3K324RSSM3K324RSSM3K324RSSM3K324R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 56 m (max) (@VGS = 4.5 V) RDS(ON) = 72 m (max) (@VG

SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit: mm High-Speed Switching Applications +0.080.42+0.08-0.050.170.05M A -0.073 4.5V drive Low ON-resistance: RDS(ON) = 42 m (max) (@VGS = 4.5 V) : RDS(ON) = 28 m (max) (@VGS = 10 V) 120.95 0.95Absolute Maxi

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package 0.60.050.50.03 Low ON-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGatesource voltage VGSS 20 VDC ID 2.9

SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 m (max) (@VGS = 1.8 V) Ron = 87 m (max) (@VGS = 2.5 V) Ron = 65 m (max) (@VGS = 4.5 V) Ron = 53 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Ch

SSM3K43FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K43FS High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : Ron = 1.52 (max) (@VGS = 1.5V) : Ron = 1.14 (max) (@VGS = 1.8V) : Ron = 0.85 (max) (@VGS = 2.5V) : Ron = 0.66 (max) (@VGS = 4.5V) : Ron = 0.63 (max) (@VGS = 5.0V) Absolute Maximum Ratings (

www.DataSheet4U.comSSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.050.80.05 Small package Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symb

UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R

SSM3K301Twww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

SSM3K7002Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

SSM3K335www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

SSM3K333Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)