SSM3K336R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3K336R
   Código: KFN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 1.7 nC
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: SOT23

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SSM3K336R Datasheet (PDF)

..1. Size:219K toshiba
ssm3k336r.pdf

SSM3K336RMOSFETs Silicon N-Channel MOSSSM3K336RSSM3K336RSSM3K336RSSM3K336R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG

7.1. Size:228K toshiba
ssm3k335r.pdf

SSM3K335RMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM3K335RSSM3K335RSSM3K335RSSM3K335R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 38 m (max) (@VGS = 10 V) RDS(ON) = 56 m

7.2. Size:225K toshiba
ssm3k339r.pdf

SSM3K339RMOSFETs Silicon N-Channel MOSSSM3K339RSSM3K339RSSM3K339RSSM3K339R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155

7.3. Size:222K toshiba
ssm3k337r.pdf

SSM3K337RMOSFETs Silicon N-Channel MOSSSM3K337RSSM3K337RSSM3K337RSSM3K337R1. Applications1. Applications1. Applications1. Applications Relay Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 Qualified (Note1).(2) 4.0-V gate drive voltage.(3) Low drain-source on-resistance: RDS(ON) = 200 m (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 m

7.4. Size:228K toshiba
ssm3k333r.pdf

SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit: mm High-Speed Switching Applications +0.080.42+0.08-0.050.170.05M A -0.073 4.5V drive Low ON-resistance: RDS(ON) = 42 m (max) (@VGS = 4.5 V) : RDS(ON) = 28 m (max) (@VGS = 10 V) 120.95 0.95Absolute Maxi

7.5. Size:161K utc
ssm3k333r.pdf

UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R

7.6. Size:1450K cn vbsemi
ssm3k335.pdf

SSM3K335www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

7.7. Size:896K cn vbsemi
ssm3k333r.pdf

SSM3K333Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

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