SSM3K336R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3K336R
Código: KFN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 1.7 nC
Cossⓘ - Capacitancia de salida: 26 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SSM3K336R
SSM3K336R Datasheet (PDF)
ssm3k336r.pdf
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SSM3K336RMOSFETs Silicon N-Channel MOSSSM3K336RSSM3K336RSSM3K336RSSM3K336R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG
ssm3k335r.pdf
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SSM3K335RMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM3K335RSSM3K335RSSM3K335RSSM3K335R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 38 m (max) (@VGS = 10 V) RDS(ON) = 56 m
ssm3k339r.pdf
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SSM3K339RMOSFETs Silicon N-Channel MOSSSM3K339RSSM3K339RSSM3K339RSSM3K339R1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155
ssm3k337r.pdf
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SSM3K337RMOSFETs Silicon N-Channel MOSSSM3K337RSSM3K337RSSM3K337RSSM3K337R1. Applications1. Applications1. Applications1. Applications Relay Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 Qualified (Note1).(2) 4.0-V gate drive voltage.(3) Low drain-source on-resistance: RDS(ON) = 200 m (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 m
ssm3k333r.pdf
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SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit: mm High-Speed Switching Applications +0.080.42+0.08-0.050.170.05M A -0.073 4.5V drive Low ON-resistance: RDS(ON) = 42 m (max) (@VGS = 4.5 V) : RDS(ON) = 28 m (max) (@VGS = 10 V) 120.95 0.95Absolute Maxi
ssm3k333r.pdf
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UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R
ssm3k335.pdf
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SSM3K335www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
ssm3k333r.pdf
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SSM3K333Rwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![SSM3K336R](https://alltransistors.com/images/us.png)
![SSM3K336R](https://alltransistors.com/images/es.png)
![SSM3K336R](https://alltransistors.com/images/ru.png)
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