SSM3K336R Datasheet. Equivalente

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 ssm3k336r.pdf

SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R SSM3K336R SSM3K336R SSM3K336R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG

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 ssm3k335r.pdf

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 ssm3k339r.pdf

SSM3K339R MOSFETs Silicon N-Channel MOS SSM3K339R SSM3K339R SSM3K339R SSM3K339R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155

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 ssm3k337r.pdf

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 ssm3k333r.pdf

SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit mm High-Speed Switching Applications +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 3 4.5V drive Low ON-resistance RDS(ON) = 42 m (max) (@VGS = 4.5 V) RDS(ON) = 28 m (max) (@VGS = 10 V) 1 2 0.95 0.95 Absolute Maxi

 7.5. Size:161K  utc
 ssm3k333r.pdf

UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R

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 ssm3k335.pdf

SSM3K335 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 7.7. Size:896K  cn vbsemi
 ssm3k333r.pdf

SSM3K333R www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)