SSM3K35CTC Todos los transistores

 

SSM3K35CTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3K35CTC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: CST3C
     - Selección de transistores por parámetros

 

SSM3K35CTC Datasheet (PDF)

 ..1. Size:223K  toshiba
 ssm3k35ctc.pdf pdf_icon

SSM3K35CTC

SSM3K35CTCMOSFETs Silicon N-Channel MOSSSM3K35CTCSSM3K35CTCSSM3K35CTCSSM3K35CTC1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2-V gate drive voltage.(2) Low drain-source on-resistanceRDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA)RDS(ON) = 3.1

 5.1. Size:207K  toshiba
 ssm3k35ct.pdf pdf_icon

SSM3K35CTC

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:223K  toshiba
 ssm3k35amfv.pdf pdf_icon

SSM3K35CTC

SSM3K35AMFVMOSFETs Silicon N-Channel MOSSSM3K35AMFVSSM3K35AMFVSSM3K35AMFVSSM3K35AMFV1. Applications1. Applications1. Applications1. Applications High-Speed Switching Analog Switches2. Features2. Features2. Features2. Features(1) 1.2 V drive(2) Low drain-source on-resistance: RDS(ON) = 9.0 (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 (max) (@

 7.2. Size:189K  toshiba
 ssm3k35fs.pdf pdf_icon

SSM3K35CTC

SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3 (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: P2804BDG | MTN50N06E3 | IPI051N15N5 | MCU12P10 | SM3116NAF | CPC3730 | SSFT4004

 

 
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